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 SM ISO690:2012SIRKELI, Vadim, YILMAZOGLU, Oktay, KUPPERS, Franko, HARTNAGEL, Hans Ludwig. Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures. In: Semiconductor Science and Technology, 2015, vol. 30, p. 0. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/30/6/065005 |
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  Semiconductor Science and Technology |
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| Volumul 30 / 2015 / ISSN 0268-1242 | ||||||
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| DOI:https://doi.org/10.1088/0268-1242/30/6/065005 | ||||||
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We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN- and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm-2 is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 × 10-4, 1.6 × 10-4, and 6.4 lm W-1 of PE, and 1.3 × 10-4, 2.9 × 10-4, and 12 cd A-1 of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively. |
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| Cuvinte-cheie Gallium nitride, internal quantum efficiency, light-emitting diode, nickel oxide, zinc oxide, Zinc selenide |
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DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <identifier identifierType='DOI'>10.1088/0268-1242/30/6/065005</identifier> <creators> <creator> <creatorName>Sirkeli, V.P.</creatorName> <affiliation>Universitatea Tehnică, Darmstadt, Germania</affiliation> </creator> <creator> <creatorName>Yilmazoglu, O.</creatorName> <affiliation>Universitatea Tehnică, Darmstadt, Germania</affiliation> </creator> <creator> <creatorName>Kuppers, F.</creatorName> <affiliation>Universitatea Tehnică, Darmstadt, Germania</affiliation> </creator> <creator> <creatorName>Hartnagel, H.</creatorName> <affiliation>Universitatea Tehnică, Darmstadt, Germania</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2015</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>0268-1242</relatedIdentifier> <subjects> <subject>Gallium nitride</subject> <subject>internal quantum efficiency</subject> <subject>light-emitting diode</subject> <subject>nickel oxide</subject> <subject>zinc oxide</subject> <subject>Zinc selenide</subject> </subjects> <dates> <date dateType='Issued'>2015-06-01</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN- and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm<sup>-2</sup> is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 × 10<sup>-4</sup>, 1.6 × 10<sup>-4</sup>, and 6.4 lm W<sup>-1</sup> of PE, and 1.3 × 10<sup>-4</sup>, 2.9 × 10<sup>-4</sup>, and 12 cd A<sup>-1</sup> of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively.</p></description> </descriptions> <formats> <format>uri</format> </formats> </resource>
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