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SM ISO690:2012 SIRKELI, Vadim, YILMAZOGLU, Oktay, KUPPERS, Franko, HARTNAGEL, Hans Ludwig. Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures. In: Semiconductor Science and Technology, 2015, vol. 30, p. 0. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/30/6/065005 |
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Semiconductor Science and Technology | ||||||
Volumul 30 / 2015 / ISSN 0268-1242 | ||||||
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DOI:https://doi.org/10.1088/0268-1242/30/6/065005 | ||||||
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We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN- and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm-2 is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 × 10-4, 1.6 × 10-4, and 6.4 lm W-1 of PE, and 1.3 × 10-4, 2.9 × 10-4, and 12 cd A-1 of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively. |
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Cuvinte-cheie Gallium nitride, internal quantum efficiency, light-emitting diode, nickel oxide, zinc oxide, Zinc selenide |
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Crossref XML Export
<?xml version='1.0' encoding='utf-8'?> <doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'> <head> <doi_batch_id>ibn-180978</doi_batch_id> <timestamp>1718846674</timestamp> <depositor> <depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name> <email_address>[email protected]</email_address> </depositor> </head> <body> <journal> <journal_metadata> <full_title>Semiconductor Science and Technology</full_title> <issn media_type='print'>02681242</issn> </journal_metadata> <journal_issue> <publication_date media_type='print'> <year>2015</year> </publication_date> <issue></issue> </journal_issue> <journal_article publication_type='full_text'><titles> <title>Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures</title> </titles> <contributors> <person_name sequence='first' contributor_role='author'> <given_name>Vadim</given_name> <surname>Sirkeli</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Oktay</given_name> <surname>Yilmazoglu</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Franko</given_name> <surname>Kuppers</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Hans Ludwig</given_name> <surname>Hartnagel</surname> </person_name> </contributors> <publication_date media_type='print'> <year>2015</year> </publication_date> <pages> <first_page>0</first_page> <last_page>0</last_page> </pages> <doi_data> <doi>10.1088/0268-1242/30/6/065005</doi> <resource>http://www.crossref.org/</resource> </doi_data> </journal_article> </journal> </body> </doi_batch>