Hot wall beam epitaxial growth of PbTe layers on BaF2/CaF2/Si(111) substrates

Belenciuc Alexandr

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 1. 2000. New Jersey. DOI 10.1109/SMICND.2000.

Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-161

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Effect of substrate origin on stability of electrical conductivity of SnO2 thin polycrystalline films

Ivashchenko Anatolii, Cherner Iacov, Maronchuk Irina

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 1. 2000. New Jersey. DOI 10.1109/SMICND.2000.

Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-159

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Deep level transient spectroscopy characterization of porous GaP layers

Călin Mircea

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 1. 2000. New Jersey. DOI 10.1109/SMICND.2000.

Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-128

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