Topological insulators represent a new class of materials that are electrically inert in the bulk yet possess time-reversal or crystalline symmetries protected metallic gapless states at their boundary. These exotic properties result from the combined effect of spin–orbit interactions and fundamental symmetries,and thus topological insulators are usually composed of heavy elements Such new type of electronic phase was identified in different type of semimetalic and narrow-gap semiconductors Bi1-x Sbx, Pb1-xSnxTe, Bi2Te3, HgTe, TlBiTe2 etc. These phases are promising systems for a emergence of new condensed matter phenomena such as Majorana, charge fractionalization novel magneto-electric effects and may also be a platform for new electronic devices. Perhaps most importantly, the surfaces of topological insulators enable the transport of spin-polarized electrons while preventing the "scattering" typically associated with power consumption, in which electrons deviate from their trajectory, resulting in dissipation. Because of such characteristics, these materials hold great potential for use in future transistors, memory devices and magnetic sensors that are highly energy efficient and require less power. But it has been a great challenge to modify surface states. In this paper we introduce a new mechanism for engineering a TI state in nanoheterostructures with imputies of transition metals near to the interface. We develop the Anderson impurity model for the TI contact that is considered in the framework of the effective Dirac model with a coordinatedependent band gap          formula       are the Dirac matrices,     formula     is a momentum operator, with vi, the components of the Fermi velocities; Δ (r) = Eg(r); and V(r) is thework function, which also depends on the coordinate, ds, is the annihilation operator of a localized electron at the impurity atom with spin s, Ed is the atomiclevel, V is the mixing matrix element between the impurity and band states, and cls, is the annihilation operatorof an electron at the lth site of the lattice with spin s. The problems of interrelated interface and impurity states are solved in the frame work of of Green function formalism. On the basis of this formalism in the case of symmetric contact of TI and band insulator with equal band gaps   formula   the spectra of electronic states are determined by the following equation   formula    , (2) where     formula      is the electron wave vector in the plane of the heterostructure. Here it is supposed to be Δ2 −ω 2 ≥ 0 , that is, only the states lying inside the band gap are considered. Equation (2) defines the impurity state in the system of thenanoheterostructure of TI and band insulator. Under the condition              formula          inside the band gap the impurity state appears. Due to the interaction between the impurity and interface localized states, there is a dependence of the impurity energy on the local position of the impurity atom relative to the interface boundary due to hybridization of impurity and topological interface states. As it follows from thecalculation, at the heterojunction boundary the impurity level is driven into the middle of the band gap. While leaving from the interface, the impurity state goes to the limit value Ed for the homogeneous materials. Decreasing the interaction between the interface and impurity states, that is, decreasing the parameter V and increasing the Fermi velocity v, this effect certainly becomes less marked.