As we have shown earlier, a single ultrashort pulse of laser radiation propagating through a thin semiconductor film in the conditions of two-photon generation of biexcitons from the crystal ground state can undergo substantial transformations. The pulse can be compressed or divided dependent on the intensity of the incident pulse, the two-photon resonance detuning and the film thickness. In this work we propose to use the time interval d t between two pulses from the same source (one of the pulses passes through the optical delay line) as an additional parameter, which allows to control the structure of the passed pulse. It has been shown that for low intensities I of two incident pulses ( I =10 MW/ cm2 ) a simple addition of the intensities of the respective passed pulses occurs. For small d t values the pulses merge into one large pulse; for large d t the both pulses remain separated. For I = 40 MW/ cm2 and small d t values the both passed pulses also merge into one pulse. However, some additional pulse of the transmitted radiation follows behind it. The durations of the both pulses are approximately equal. When d t increases the passed pulses divide, and the additional pulse disappears. For I = 60 ÷100 MW/ cm2 the intensity of the additional pulse becomes larger than the intensity of the pulse, which appears when the two passed pulses merge, and its duration becomes considerably less than the duration of the incident pulse. When the intensity of incident pulses continues to increase, the structure of the passed pulse becomes even more complicated (Fig. 1).figureFig. 1. Dependence of the intensity of radiation passed through a thin semiconductor film versus the time t and the delay time d t for I = 200 MW/ cm2 .