Surface State Density at the Semiconductor–Glass Interface
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NASIROV, A.. Surface State Density at the Semiconductor–Glass Interface . In: Surface Engineering and Applied Electrochemistry, 2008, nr. 4(44), pp. 339-340. ISSN 1068-3755.
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Surface Engineering and Applied Electrochemistry
Numărul 4(44) / 2008 / ISSN 1068-3755 /ISSNe 1934-8002

Surface State Density at the Semiconductor–Glass Interface

Pag. 339-340

Nasirov A.
 
 
 
Disponibil în IBN: 14 decembrie 2013


Rezumat

An investigative technique for the determination of the surface state density (SSD) at the semiconductor–lead-borosilicate-glass interface is proposed. It is shown that this technique involving differentiation of the C–V dependence is a more precise and less labor-consuming method, which shows the uniqueness of the solution.