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 SM ISO690:2012NASIROV, A.. Surface State Density at the Semiconductor–Glass Interface
. In: Surface Engineering and Applied Electrochemistry, 2008, nr. 4(44), pp. 339-340. ISSN 1068-3755. |
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  Surface Engineering and Applied Electrochemistry |
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| Numărul 4(44) / 2008 / ISSN 1068-3755 /ISSNe 1934-8002 | ||||||
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An investigative technique for the determination of the surface state density (SSD) at the semiconductor–lead-borosilicate-glass interface is proposed. It is shown that this technique involving differentiation of the C–V dependence is a more precise and less labor-consuming method, which shows the uniqueness of the solution.
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<meta name="citation_title" content="Surface State Density at the Semiconductor–Glass Interface "> <meta name="citation_author" content="Nasirov A."> <meta name="citation_publication_date" content="2008/08/04"> <meta name="citation_journal_title" content="Surface Engineering and Applied Electrochemistry"> <meta name="citation_volume" content="44"> <meta name="citation_issue" content="4"> <meta name="citation_firstpage" content="339"> <meta name="citation_lastpage" content="340"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Surface%20state%20density%20339_340.pdf">
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