Topological insulator Bi2Te3 layers, transport and thermoelectric properties
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NIKOLAEVA, Albina, KONOPKO, Leonid, ROGACKI, Krzysztof, RUSU, Alexandru, GRIŢCO, Roman. Topological insulator Bi2Te3 layers, transport and thermoelectric properties. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 261. ISBN 978-9975-9787-1-2.
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Materials Science and Condensed Matter Physics
Editia 8, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Topological insulator Bi2Te3 layers, transport and thermoelectric properties


Pag. 261-261

Nikolaeva Albina12, Konopko Leonid12, Rogacki Krzysztof2, Rusu Alexandru1, Griţco Roman13
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
2 International Laboratory of High Magnetic Fields and Low Temperatures,
3 Technical University of Moldova
 
Proiecte:
 
Disponibil în IBN: 2 august 2019


Rezumat

We have investigated thermoelectric properties and Shubnikov de Haas (SdH) oscillations in topological insulator (TI) Bi2Te3 layers. TI are electronic materials that have a bulk band gap like an ordinary insulator but have protected conduction state on their edge of surface. These states are possible due to the combination as spin- orbit interactions and time- reversal symmetry [1]. It has been predicted theoretically that thermoelectric figure of merit  can be strongly enhanced in Bi2Te3 thin films TI [2].

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<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Nikolaeva, A.A.</dc:creator>
<dc:creator>Konopko, L.A.</dc:creator>
<dc:creator>Rogacki, K.</dc:creator>
<dc:creator>Rusu, A.I.</dc:creator>
<dc:creator>Griţco, R.</dc:creator>
<dc:date>2016</dc:date>
<dc:description xml:lang='en'><p>We have investigated thermoelectric properties and Shubnikov de Haas (SdH) oscillations in topological insulator (TI) Bi2Te3 layers. TI are electronic materials that have a bulk band gap like an ordinary insulator but have protected conduction state on their edge of surface. These states are possible due to the combination as spin- orbit interactions and time- reversal symmetry [1]. It has been predicted theoretically that thermoelectric figure of merit&nbsp; can be strongly enhanced in Bi2Te3 thin films TI [2].</p></dc:description>
<dc:source>Materials Science and Condensed Matter Physics (Editia 8) 261-261</dc:source>
<dc:title>Topological insulator Bi2Te3 layers, transport and thermoelectric properties</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>