Photonic crystal structures based on GaN ultrathin membranes
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Electromagnetism. Electromagnetic field. Electrodynamics (62)
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VOLCIUC, Olesea, SERGENTU, Vladimir, TIGINYANU, Ion, SCHOWALTER, Marco, URSAKI, Veaceslav, ROSENAUER, Andreas, HOMMEL, Detlef, GUTOWSKI, Jurgen. Photonic crystal structures based on GaN ultrathin membranes. In: Journal of Nanoelectronics and Optoelectronics, 2014, vol. 9, pp. 271-275. ISSN 1555-130X. DOI: https://doi.org/10.1166/jno.2014.1586
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Journal of Nanoelectronics and Optoelectronics
Volumul 9 / 2014 / ISSN 1555-130X

Photonic crystal structures based on GaN ultrathin membranes

DOI:https://doi.org/10.1166/jno.2014.1586
CZU: 537.86+537.312

Pag. 271-275

Volciuc Olesea12, Sergentu Vladimir3, Tiginyanu Ion24, Schowalter Marco1, Ursaki Veaceslav4, Rosenauer Andreas1, Hommel Detlef1, Gutowski Jurgen1
 
1 University of Bremen,
2 Technical University of Moldova,
3 Institute of Applied Physics, Academy of Sciences of Moldova,
4 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova
 
 
Disponibil în IBN: 21 martie 2018


Rezumat

We report on maskless fabrication of ultrathin (d ∼15 nm) nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with a diameter of 150 nm, and show that these membranes represent an intermediate case between two-dimensional (2D) and three-dimensional (3D) photonic crystals (PhC). A calculation of the dispersion law in the approximation of scalar waves is indicative of the occurrence of surface and bulk modes, further, there is a range of frequencies where only surface modes can exist. Advantages of the occurrence of two types of modes in ultrathin nanoperforated GaN membranes from the point of view of their incorporation in photonic and optoelectronic integrated circuits are discussed

Cuvinte-cheie
GaN Ultrathin Membranes, Nanostructure Fabrication, Photonic Crystals, Theory and Design

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