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SM ISO690:2012 KONDRYA, Elena, NIKORICH, Andrey V.. Quantum oscillations of resistivity in bismuth nanowires. In: Moldavian Journal of the Physical Sciences, 2009, nr. 3-4(8), pp. 319-324. ISSN 1810-648X. |
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Moldavian Journal of the Physical Sciences | ||||||
Numărul 3-4(8) / 2009 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
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Pag. 319-324 | ||||||
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We studied the influence of uniaxial deformation on the transport properties of bismuth
wires in the wide range of temperatures. Measurements of the resistance of bismuth
nanowires with several diameters and different quality reveal oscillations on the dependence
of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%)
at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate
from quantum size effect.
Evaluation of period of oscillations allows us to identify the groups of carriers involved
in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for
two experimentally observed sets of oscillations from light and heavy electrons. |
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DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Condrea, E.P.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Nicorici, A.V.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Quantum oscillations of resistivity in bismuth nanowires</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2009</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier> <dates> <date dateType='Issued'>2009-09-05</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'>We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons. </description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>