Hopping conductivity and spectrum of localized carriers in β-FeS2i:Mn
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ARUSHANOV, Ernest, LISUNOV, Konstantin, VINZELLBERG, H, BEHR, Gunther U., SCHUMANN, Joachim, SCHMIDT, Oliver. Hopping conductivity and spectrum of localized carriers in β-FeS2i:Mn. In: Moldavian Journal of the Physical Sciences, 2009, nr. 1(8), pp. 49-53. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 1(8) / 2009 / ISSN 1810-648X /ISSNe 2537-6365

Hopping conductivity and spectrum of localized carriers in β-FeS2i:Mn


Pag. 49-53

Arushanov Ernest12, Lisunov Konstantin1, Vinzellberg H2, Behr Gunther U.3, Schumann Joachim3, Schmidt Oliver3
 
1 Leibniz Institute for Solid State and Materials Reseach, Dresden,
2 Institute for Integrative Nanosciences,
3 Institut fuer Integrative Nanowissenschaften, Leibniz-Institut fuer Festkoerper- und Werkstoffforschung Dresden
 
 
Disponibil în IBN: 14 decembrie 2013


Rezumat

Resistivity measurements of Mn-doped p-type β-FeSi2 single crystals are presented and analyzed with the different hopping conductivity models. Both the Mott and the Shklovskii- Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the universal scaling behavior of the resistivity. The characteristic and transition temperatures and widths of the impurity band and of the Coulomb gap, Δ, in the density of states (DOS) are obtained, indicating existence of a rigid gap, δ, in the spectrum of DOS, in addition to Δ, which points out to the polaronic nature of the charge carriers in the investigated compound.