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Condensed matter physics. Solid state physics (349) |
SM ISO690:2012 BOTNARIUC, Vasile, GORCEAC, Leonid, KOVAL, Andrei, KETRUSH, Petru, CINIC, Boris, RAEVSKY, Simion, MICLI, Valdec. CdS nanometric layers grown on SnO2 coated glass substrates for photovoltaic devices. In: Fizică şi tehnică: procese, modele, experimente, 2012, nr. 1, pp. 11-15. ISSN 1857-0437. |
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Fizică şi tehnică: procese, modele, experimente | ||||||
Numărul 1 / 2012 / ISSN 1857-0437 | ||||||
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CdS layer thickness decreases at high substrate temperatures due to the fact that a part of CdCl2/(NH2)2 CS aqueous solution evaporates without reaching the substrate surface. CdS layers deposited at the substrate temperature from 250oC to 450oC are growing with a deficit of sulfur. CdS layers with better stoichiometry were grown in the conditions when in the solutions, used for CdS layers growing, there is an excess of thiourea (CdCl2/ TU =1:2). The high charge carrier concentration of 1020cm-3 in CdS layers grown on glass substrates coated with SnO2 layer is related to Sn doping of the layers from SnO2 layer. |
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<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Botnariuc, V.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Gorceac, L.L.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Coval, A.V.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Chetruş, P.I.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Cinic, B.S.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Raevschi, S.D.</creatorName> <affiliation>Tallinn University of Technology, Estonia</affiliation> </creator> <creator> <creatorName>Micli, V.</creatorName> <affiliation>Tallinn University of Technology, Estonia</affiliation> </creator> </creators> <titles> <title xml:lang='en'>CdS nanometric layers grown on SnO2 coated glass substrates for photovoltaic devices</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2012</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1857-0437</relatedIdentifier> <subjects> <subject schemeURI='http://udcdata.info/' subjectScheme='UDC'>538.956</subject> </subjects> <dates> <date dateType='Issued'>2012-01-03</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'>CdS layer thickness decreases at high substrate temperatures due to the fact that a part of CdCl2/(NH2)2 CS aqueous solution evaporates without reaching the substrate surface. CdS layers deposited at the substrate temperature from 250oC to 450oC are growing with a deficit of sulfur. CdS layers with better stoichiometry were grown in the conditions when in the solutions, used for CdS layers growing, there is an excess of thiourea (CdCl2/ TU =1:2). The high charge carrier concentration of 1020cm-3 in CdS layers grown on glass substrates coated with SnO2 layer is related to Sn doping of the layers from SnO2 layer.</description> <description xml:lang='ro' descriptionType='Abstract'>Grosimea stratului de CdS se diminuiază la temperaturi ridicate ale substratului, datorită faptului că o parte din soluţia apoasă CdCl2/(NH2)2CS se evaporă fără a atinge suprafaţa substratului. Straturile CdS depuse la temperatura substratului de la 250°C la 450°C sînt în creştere cu un deficit de sulf. Straturi CdS cu o stoichiometrie mai bună au fost obţinute în condiţiile în care în soluţiile, utilizate pentru depunerea straturilor CdS, există exces de tiouree (CdCl2/ TU = 1:2). Concentraţia înaltă de transport de 1020 cm-3 în straturile CdS depuse pe substraturi de sticlă, acoperite cu un strat de SnO2, este legată de dopajul straturilor cu Sn din stratul SnO2.</description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>