Impurity distribution in n-ZnSe crystals doped with Au

Nedeoglo Dumitru; Nedeoglo Natalia; Sirkeli Vadim

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NEDEOGLO, Dumitru, NEDEOGLO, Natalia, SIRKELI, Vadim. Impurity distribution in n-ZnSe crystals doped with Au . In: Moldavian Journal of the Physical Sciences, 2005, nr. 4(4), pp. 435-437. ISSN 1810-648X.

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Moldavian Journal of the Physical Sciences

Numărul 4(4) / 2005 / ISSN 1810-648X /ISSNe 2537-6365

Impurity distribution in n-ZnSe crystals doped with Au

Pag. 435-437

Nedeoglo Dumitru, Nedeoglo Natalia, Sirkeli Vadim

Universitatea de Stat din Moldova

Disponibil în IBN: 13 decembrie 2013

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Rezumat

Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample surface. The model, which explains this distribution by a simultaneous diffusion of Zn and Au atoms during a long-term high-temperature annealing of as-grown crystals in Zn Au melt, is proposed.

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