Electron-polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures
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POKATILOV, Evghenii, NIKA, Denis, ZINCENCO, Nadejda, BALANDIN, Alexander A.. Electron-polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures. In: Journal of Physics: Conference Series, Ed. 5, 15-20 iulie 2007, Sainte-Maxime. Cambridge: Institute of Physics, 2007, Ediția 1, Vol. 92, pp. 1-5. ISSN 1742-6588; E-ISSN:1742-6596. DOI: https://doi.org/10.1088/1742-6596/92/1/012050
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Journal of Physics: Conference Series
Ediția 1, Vol. 92, 2007
Conferința "PHONONS 2007"
5, Sainte-Maxime, Franța, 15-20 iulie 2007

Electron-polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures

DOI:https://doi.org/10.1088/1742-6596/92/1/012050

Pag. 1-5

Pokatilov Evghenii12, Nika Denis12, Zincenco Nadejda2, Balandin Alexander A.1
 
1 University of California, Riverside,
2 Moldova State University
 
 
Disponibil în IBN: 3 iulie 2024


Rezumat

We have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow InxGa1-xN channel in the center of GaN potential well. It was found that two- to fivefold increase of the room temperature electron mobility can be achieved. The tuning of the electron mobility with the external electric field or InxGa1-xN channel can be useful for the design of GaN-based field-effect transistors and optoelectronic devices. 

Cuvinte-cheie
thermal conductivity, phonon, Molecular dynamics