ZnSnN2 is composed of common non-toxic elements. It exhibits promising optoelectronic properties for application in photoelectric conversion and electromagnetic radiation detection devices. However, the available data on its physical properties are incomplete or contradictory. In this work, we prepare ZnSnN2 thin films and study in detail their structural properties as function of deposition conditions. DC magnetron sputtering was used because it allows the preparation of thin polycrystalline ZnSnN2 films on large areas and it can be easily upscaled. The films were prepared using targets of various atomic [Zn]/[Sn] ratios in nitrogen atmosphere at temperatures ranging from 30 to 300°C. Structural analysis, using Grazing Incidence X-ray Diffraction (GIXRD) and X-ray Reflectivity (XRR), revealed the formation of polycrystalline ZnSnN2 films with a wurtzite crystal structure. The obtained structural parameters were found to be influenced by the substrate temperature and elemental concentration in the target. These findings will be used for optimization of the manufacturing process for desired film characteristics.