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 SM ISO690:2012TIGINYANU, Ion, URSACHI, Veaceslav, MANJON, Francisco Javier, TEZLEVAN, Victor. Raman scattering study of pressure-induced phase transitions in A IIB2IIIC4VI defect chalcopyrites and spinels. In: Journal of Physics and Chemistry of Solids, 2003, vol. 64, pp. 1603-1607. ISSN 0022-3697. DOI: https://doi.org/10.1016/S0022-3697(03)00098-2 |
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  Journal of Physics and Chemistry of Solids |
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| Volumul 64 / 2003 / ISSN 0022-3697 /ISSNe 0022-3697 | ||||||
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| DOI:https://doi.org/10.1016/S0022-3697(03)00098-2 | ||||||
| Pag. 1603-1607 | ||||||
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AIIB2IIIC4VI defect chalcopyrites (DC) and spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. All these compounds were found to undergo a phase transition to a Raman inactive defect NaCl-type structure. The phase transition is reversible for spinels and irreversible for DC. From the analysis of the pressure behavior of Raman-active modes, it was concluded that the phase transition from spinel to NaCl-type structure is direct in MnIn2S4 and CdIn2S4, while it occurs via an intermediate LiVO2-type NaCl superstructure in MgIn2S4. The observed differences in the pressures and the paths of the pressure-induced phase transitions in AIIB 2IIIC4VI compounds are discussed. |
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| Cuvinte-cheie High pressure effects, Hydrostatic pressure, Phase transitions, Semiconductor materials |
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