Raman scattering study of pressure-induced phase transitions in A IIB2IIIC4VI defect chalcopyrites and spinels
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TIGINYANU, Ion, URSACHI, Veaceslav, MANJON, Francisco Javier, TEZLEVAN, Victor. Raman scattering study of pressure-induced phase transitions in A IIB2IIIC4VI defect chalcopyrites and spinels. In: Journal of Physics and Chemistry of Solids, 2003, vol. 64, pp. 1603-1607. ISSN 0022-3697. DOI: https://doi.org/10.1016/S0022-3697(03)00098-2
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Journal of Physics and Chemistry of Solids
Volumul 64 / 2003 / ISSN 0022-3697 /ISSNe 0022-3697

Raman scattering study of pressure-induced phase transitions in A IIB2IIIC4VI defect chalcopyrites and spinels

DOI:https://doi.org/10.1016/S0022-3697(03)00098-2

Pag. 1603-1607

Tiginyanu Ion1, Ursachi Veaceslav1, Manjon Francisco Javier2, Tezlevan Victor1
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Universitat Politècnica de València
 
 
Disponibil în IBN: 7 februarie 2024


Rezumat

AIIB2IIIC4VI defect chalcopyrites (DC) and spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. All these compounds were found to undergo a phase transition to a Raman inactive defect NaCl-type structure. The phase transition is reversible for spinels and irreversible for DC. From the analysis of the pressure behavior of Raman-active modes, it was concluded that the phase transition from spinel to NaCl-type structure is direct in MnIn2S4 and CdIn2S4, while it occurs via an intermediate LiVO2-type NaCl superstructure in MgIn2S4. The observed differences in the pressures and the paths of the pressure-induced phase transitions in AII2IIIC4VI compounds are discussed.

Cuvinte-cheie
High pressure effects, Hydrostatic pressure, Phase transitions, Semiconductor materials

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<title xml:lang='en'>Raman scattering study of pressure-induced phase transitions in A IIB2IIIC4VI defect chalcopyrites and spinels</title>
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<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2003</publicationYear>
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<subject>High pressure effects</subject>
<subject>Hydrostatic pressure</subject>
<subject>Phase transitions</subject>
<subject>Semiconductor materials</subject>
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<description xml:lang='en' descriptionType='Abstract'><p>A<sup>II</sup>B<sub>2</sub><sup>III</sup>C<sub>4</sub><sup>VI</sup>&nbsp;defect chalcopyrites (DC) and spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. All these compounds were found to undergo a phase transition to a Raman inactive defect NaCl-type structure. The phase transition is reversible for spinels and irreversible for DC. From the analysis of the pressure behavior of Raman-active modes, it was concluded that the phase transition from spinel to NaCl-type structure is direct in MnIn<sub>2</sub>S<sub>4</sub>&nbsp;and CdIn<sub>2</sub>S<sub>4</sub>, while it occurs via an intermediate LiVO<sub>2</sub>-type NaCl superstructure in MgIn<sub>2</sub>S<sub>4</sub>. The observed differences in the pressures and the paths of the pressure-induced phase transitions in A<sup>II</sup>B&nbsp;<sub>2</sub><sup>III</sup>C<sub>4</sub><sup>VI</sup>&nbsp;compounds are discussed.</p></description>
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