| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 80 0 |
 SM ISO690:2012GEORGOBIANI, Anatoly, ILYUKHINA, Z., SPITSYN, Alexey, TIGINYANU, Ion. Properties of the system ZnS:In+ after high indium implantation doses. In: Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik ″Kratkie Soobshcheniya po Fizike″. AN SSSR), 1981, pp. 22-25. ISSN 0364-2321. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik ″Kratkie Soobshcheniya po Fizike″. AN SSSR) |
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| / 1981 / ISSN 0364-2321 | |
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| Pag. 22-25 | |
| Rezumat | |
The properties of the system zns:in** + , obtained in the form of a layer by implanting indium in zinc sulfide single crystals, have been investigated. it was found that when the indium dose was d = 10**1**6 cm** - **2, the properties of the layer were correlated with the properties of the ternary compound ZnIn//2S//4. |
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| Cuvinte-cheie indium and alloys, Zinc sulfide, semiconducting zinc compounds - ion implantation |
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