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 SM ISO690:2012ANDRIESH, Andrei, POPESCU, Mihai A., YOVU, M., VERLAN, Victor, SHUTOV, Serghei, BULGARU, M., KOLOMEYKO, Eduard, MALKOV, Sergei, LEONOVICI, Minola Rodica, MIHAI, V., ŞTEFLEA, Mioara, ZAMFIRA, Sorin Constantin. Atomic structure and electron transport properties of glassy As2Se3:Snx. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 83-86. DOI: https://doi.org/10.1109/SMICND.1995.494869 |
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| Proceedings of the International Semiconductor Conference 1995 | ||||||
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Conferința "International Semiconductor Conference" 18, Sinaia, Romania, 11-14 octombrie 1995 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1995.494869 | ||||||
| Pag. 83-86 | ||||||
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According to X-ray diffraction, electrical conductivity and photoelectrical measurements, the evolution of the structure and of the physical properties of the glass system As2Se3: Snx with the tin concentration is explained by the gradual entering of tin in the As2Se3 disordered layers and the formation of the three-dimensional network by cross-linking the layers. |
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| Cuvinte-cheie Arsenic compounds, Composition effects, Crosslinking, Crystal atomic structure, Electric conductivity of solids, Electric variables measurement, Electron transport properties, Optical variables measurement, Photoelectricity, Semiconducting tin compounds, Semiconductor doping, X ray crystallography |
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