Atomic structure and electron transport properties of glassy As2Se3:Snx
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ANDRIESH, Andrei, POPESCU, Mihai A., YOVU, M., VERLAN, Victor, SHUTOV, Serghei, BULGARU, M., KOLOMEYKO, Eduard, MALKOV, Sergei, LEONOVICI, Minola Rodica, MIHAI, V., ŞTEFLEA, Mioara, ZAMFIRA, Sorin Constantin. Atomic structure and electron transport properties of glassy As2Se3:Snx. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 83-86. DOI: https://doi.org/10.1109/SMICND.1995.494869
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Proceedings of the International Semiconductor Conference 1995
Conferința "International Semiconductor Conference"
18, Sinaia, Romania, 11-14 octombrie 1995

Atomic structure and electron transport properties of glassy As2Se3:Snx

DOI:https://doi.org/10.1109/SMICND.1995.494869

Pag. 83-86

Andriesh Andrei, Popescu Mihai A., Yovu M., Verlan Victor, Shutov Serghei, Bulgaru M., Kolomeyko Eduard, Malkov Sergei, Leonovici Minola Rodica, Mihai V., Şteflea Mioara, Zamfira Sorin Constantin
 
Academy of Sciences of Moldova
 
 
Disponibil în IBN: 8 decembrie 2023


Rezumat

According to X-ray diffraction, electrical conductivity and photoelectrical measurements, the evolution of the structure and of the physical properties of the glass system As2Se3: Snx with the tin concentration is explained by the gradual entering of tin in the As2Se3 disordered layers and the formation of the three-dimensional network by cross-linking the layers.

Cuvinte-cheie
Arsenic compounds, Composition effects, Crosslinking, Crystal atomic structure, Electric conductivity of solids, Electric variables measurement, Electron transport properties, Optical variables measurement, Photoelectricity, Semiconducting tin compounds, Semiconductor doping, X ray crystallography

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