Thickness dependent properties of CdS/CdTe hetero-photo-elements
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POTLOG, Tamara, SITES, James R., GASHIN, Peter A., GHIMPU, Lidia. Thickness dependent properties of CdS/CdTe hetero-photo-elements. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 25, 8-12 octombrie 2002, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2002, Vol. 1, Ediția 25, pp. 223-226. ISBN 0780374401. DOI: https://doi.org/10.1109/SMICND.2002.1105836
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Proceedings of the International Semiconductor Conference
Vol. 1, Ediția 25, 2002
Conferința "25th International Semiconductor Conference"
25, Sinaia, Romania, 8-12 octombrie 2002

Thickness dependent properties of CdS/CdTe hetero-photo-elements

DOI:https://doi.org/10.1109/SMICND.2002.1105836

Pag. 223-226

Potlog Tamara1, Sites James R.2, Gashin Peter A.1, Ghimpu Lidia1
 
1 Moldova State University,
2 Colorado State University
 
 
Disponibil în IBN: 28 noiembrie 2023


Rezumat

The analysis of the I-V characteristics of CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating: Jsc = 24,8 mA/cm2, Voc = 0,82V, FF = 0,48, η = 9,76% are obtained in the case when time of deposition of CdTe is 3,5min. The photoresponse decreases with increasing of the CdTe thickness. The photosensitivity covers the wavelength range from 0,50 μm to 0,86 μm for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3,5 min. 

Cuvinte-cheie
Antireflection coatings, Cadmium Sulfide, Cadmium Telluride, charge carriers, deposition, Heterojunctions

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