Articolul precedent |
Articolul urmator |
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SM ISO690:2012 POTLOG, Tamara, SITES, James R., GASHIN, Peter A., GHIMPU, Lidia. Thickness dependent properties of CdS/CdTe hetero-photo-elements. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 25, 8-12 octombrie 2002, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2002, Vol. 1, Ediția 25, pp. 223-226. ISBN 0780374401. DOI: https://doi.org/10.1109/SMICND.2002.1105836 |
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Proceedings of the International Semiconductor Conference Vol. 1, Ediția 25, 2002 |
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Conferința "25th International Semiconductor Conference" 25, Sinaia, Romania, 8-12 octombrie 2002 | ||||||
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DOI:https://doi.org/10.1109/SMICND.2002.1105836 | ||||||
Pag. 223-226 | ||||||
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The analysis of the I-V characteristics of CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating: Jsc = 24,8 mA/cm2, Voc = 0,82V, FF = 0,48, η = 9,76% are obtained in the case when time of deposition of CdTe is 3,5min. The photoresponse decreases with increasing of the CdTe thickness. The photosensitivity covers the wavelength range from 0,50 μm to 0,86 μm for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3,5 min. |
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Cuvinte-cheie Antireflection coatings, Cadmium Sulfide, Cadmium Telluride, charge carriers, deposition, Heterojunctions |
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DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Potlog, T.P.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Sites, J.</creatorName> <affiliation>Universitatea de Stat din Colorado, Statele Unite ale Americii</affiliation> </creator> <creator> <creatorName>Gaşin, P.A.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Ghimpu, L.Z.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Thickness dependent properties of CdS/CdTe hetero-photo-elements</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2002</publicationYear> <relatedIdentifier relatedIdentifierType='ISBN' relationType='IsPartOf'>0780374401</relatedIdentifier> <subjects> <subject>Antireflection coatings</subject> <subject>Cadmium Sulfide</subject> <subject>Cadmium Telluride</subject> <subject>charge carriers</subject> <subject>deposition</subject> <subject>Heterojunctions</subject> </subjects> <dates> <date dateType='Issued'>2002</date> </dates> <resourceType resourceTypeGeneral='Text'>Conference Paper</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>The analysis of the I-V characteristics of CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating: J<sub>sc</sub> = 24,8 mA/cm<sup>2</sup>, V<sub>oc</sub> = 0,82V, FF = 0,48, η = 9,76% are obtained in the case when time of deposition of CdTe is 3,5min. The photoresponse decreases with increasing of the CdTe thickness. The photosensitivity covers the wavelength range from 0,50 μm to 0,86 μm for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3,5 min. </p></description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>