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 SM ISO690:2012SHISHIYANU, Sergiu, SINGH, R., SHISHIYANU, Teodor, LUPAN, Oleg, RAILEAN, Sergey, ŞARGU, Sergiu. Rapid photothermal processing for silicon solar cells fabrication. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 29, 27-29 septembrie 2006, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2006, Vol. 1, Ediția 29, pp. 175-178. ISBN 1424401097, 978-142440109-3. DOI: https://doi.org/10.1109/SMICND.2006.283961 |
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 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 29, 2006 |
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Conferința "29th International Semiconductor Conference" 29, Sinaia, Romania, 27-29 septembrie 2006 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2006.283961 | ||||||
| Pag. 175-178 | ||||||
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In our report we demonstrated the advantage of the Rapid Photothermal Processing (RPP) technology compare to conventional furnace technology for solar cells fabrication: short time, low thermal budget and low temperature processing, high heating-cooling rates. The n+-p-Si junctions were obtained from electrochemical deposited P source by Rapid Photothermal Processing enhanced diffusion for 16 s at 900°C and 1000°C. The emitter sheet resistivity decreased from 1100 Ω/sq, RPP duration 60 s to 340Ω/sq, RPP duration 200s at 999°C. The concentration profiles of P in Si after RPP enhanced diffusion were analyzed. The regime of emitter ohmic contact formation is RPP at 310V for 8-10s. The photoelectrical parameters of the obtained n+-p and p+-n-Si photovoltaic cell are respective FF=33%, η=4.1% and FF=40%, η=1.1%. The obtained results demonstrated that all steps of the n -p and p -n-Si solar cells fabrication can be realized by the Rapid Photothermal Processing technology. |
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| Cuvinte-cheie Concentration (process), electrochemistry, Low temperature phenomena, Parameter estimation, Polysilicon, Semiconductor junctions |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Şişianu, S.T.</dc:creator> <dc:creator>Singh, R.</dc:creator> <dc:creator>Şişianu, T.S.</dc:creator> <dc:creator>Lupan, O.I.</dc:creator> <dc:creator>Railean, S.C.</dc:creator> <dc:creator>Şargu, S.</dc:creator> <dc:date>2006</dc:date> <dc:description xml:lang='en'><p>In our report we demonstrated the advantage of the Rapid Photothermal Processing (RPP) technology compare to conventional furnace technology for solar cells fabrication: short time, low thermal budget and low temperature processing, high heating-cooling rates. The n<sup>+</sup>-p-Si junctions were obtained from electrochemical deposited P source by Rapid Photothermal Processing enhanced diffusion for 16 s at 900°C and 1000°C. The emitter sheet resistivity decreased from 1100 Ω/sq, RPP duration 60 s to 340Ω/sq, RPP duration 200s at 999°C. The concentration profiles of P in Si after RPP enhanced diffusion were analyzed. The regime of emitter ohmic contact formation is RPP at 310V for 8-10s. The photoelectrical parameters of the obtained n<sup>+</sup>-p and p<sup>+</sup>-n-Si photovoltaic cell are respective FF=33%, η=4.1% and FF=40%, η=1.1%. The obtained results demonstrated that all steps of the n -p and p -n-Si solar cells fabrication can be realized by the Rapid Photothermal Processing technology. </p></dc:description> <dc:source>Proceedings of the International Semiconductor Conference (Vol. 1, Ediția 29) 175-178</dc:source> <dc:subject>Concentration (process)</dc:subject> <dc:subject>electrochemistry</dc:subject> <dc:subject>Low temperature phenomena</dc:subject> <dc:subject>Parameter estimation</dc:subject> <dc:subject>Polysilicon</dc:subject> <dc:subject>Semiconductor junctions</dc:subject> <dc:title>Rapid photothermal processing for silicon solar cells fabrication</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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