| Articolul precedent |
| Articolul urmator |
 |
 126 0 |
 SM ISO690:2012KOROTCHENKOV, Ghenadii, BRYNZARI, Vladimir, IVANOV, Michail, BLINOV, Iurii, STETTER, Joseph R.. Processes controlling the rate of in2O3 thin film gas sensor's response. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 36, 3-5 octombrie 2005, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2005, Vol. 1, Ediția 28, pp. 209-212. ISBN 0780392140, 978-078039214-4. DOI: https://doi.org/10.1109/SMICND.2005.1558749 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 28, 2005 |
||||||
|
Conferința "28th International Semiconductor Conference" 36, Sinaia, Romania, 3-5 octombrie 2005 | ||||||
|
||||||
| DOI:https://doi.org/10.1109/SMICND.2005.1558749 | ||||||
| Pag. 209-212 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The kinetics of gas response to reducing and oxidizing gases of In 2O3-based thin film gas sensors is analyzed in this report. The influence of operating temperature, air humidity and film thickness (d from 20 to 400 nm) on both the Eact and time constants of gas response is reviewed. Model conceptions allowing to explain specific character of In2O3 interaction with reducing and oxidizing gases are proposed. |
||||||
| Cuvinte-cheie gas response, In2O3, kinetics, thin films |
||||||
|
Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Korotcenkov, G.S.</dc:creator> <dc:creator>Brînzari, V.I.</dc:creator> <dc:creator>Ivanov, M.</dc:creator> <dc:creator>Blinov, I.</dc:creator> <dc:creator>Stetter, J.</dc:creator> <dc:date>2005</dc:date> <dc:description xml:lang='en'><p>The kinetics of gas response to reducing and oxidizing gases of In <sub>2</sub>O<sub>3</sub>-based thin film gas sensors is analyzed in this report. The influence of operating temperature, air humidity and film thickness (d from 20 to 400 nm) on both the E<sub>act</sub> and time constants of gas response is reviewed. Model conceptions allowing to explain specific character of In<sub>2</sub>O<sub>3</sub> interaction with reducing and oxidizing gases are proposed.</p></dc:description> <dc:source>Proceedings of the International Semiconductor Conference (Vol. 1, Ediția 28) 209-212</dc:source> <dc:subject>gas response</dc:subject> <dc:subject>In2O3</dc:subject> <dc:subject>kinetics</dc:subject> <dc:subject>thin films</dc:subject> <dc:title>Processes controlling the rate of in2O3 thin film gas sensor's response</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
|
|
|
