Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
![]() |
![]() ![]() |
![]() TIGINYANU, Ion, URSAKI, Veaceslav, RAPTIS, Yiannis S., STERGIOU, Vassiliki C., ANASTASSAKIS, Evangelos M., HARTNAGEL, Hans Ludwig, VOGT, Alexander, PREVOT, Bernard, SCHWAB, Claude R.. Raman modes in porous GaP under hydrostatic pressure. In: Physica Status Solidi (B) Basic Research, 1999, vol. 211, pp. 281-286. ISSN 0370-1972. DOI: https://doi.org/10.1002/(sici)1521-3951(199901)211:1<281::aid-pssb281>3.0.co;2-%23 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Physica Status Solidi (B) Basic Research | |
Volumul 211 / 1999 / ISSN 0370-1972 | |
|
|
DOI:https://doi.org/10.1002/(sici)1521-3951(199901)211:1<281::aid-pssb281>3.0.co;2-%23 | |
Pag. 281-286 | |
Vezi articolul | |
Rezumat | |
Bulk and free-standing porous membranes of GaP have been characterised by Raman spectroscopy under hydrostatic pressure, with emphasis to the Fröhlich surface vibration mode. Under compression, an increase in the frequency gap between the Fröhlich mode and the LO phonon has been observed, which is attributed to pressure-induced changes in the anharmonicity of the surface-related modes and, possibly, to the relative increase of the dielectric constant of the surrounding effective medium, through better wetting under compression. |
|
Cuvinte-cheie Gallium phosphide, hydraulics, III-V semiconductors, wetting |
|
|