Raman modes in porous GaP under hydrostatic pressure
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TIGINYANU, Ion, URSAKI, Veaceslav, RAPTIS, Yiannis S., STERGIOU, Vassiliki C., ANASTASSAKIS, Evangelos M., HARTNAGEL, Hans Ludwig, VOGT, Alexander, PREVOT, Bernard, SCHWAB, Claude R.. Raman modes in porous GaP under hydrostatic pressure. In: Physica Status Solidi (B) Basic Research, 1999, vol. 211, pp. 281-286. ISSN 0370-1972. DOI: https://doi.org/10.1002/(sici)1521-3951(199901)211:1<281::aid-pssb281>3.0.co;2-%23
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Physica Status Solidi (B) Basic Research
Volumul 211 / 1999 / ISSN 0370-1972

Raman modes in porous GaP under hydrostatic pressure

DOI:https://doi.org/10.1002/(sici)1521-3951(199901)211:1<281::aid-pssb281>3.0.co;2-%23

Pag. 281-286

Tiginyanu Ion1, Ursaki Veaceslav2, Raptis Yiannis S.3, Stergiou Vassiliki C.3, Anastassakis Evangelos M.3, Hartnagel Hans Ludwig4, Vogt Alexander4, Prevot Bernard5, Schwab Claude R.5
 
1 Technical University of Moldova,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 National Technical University of Athens,
4 Technical University Darmstadt,
5 PHASE laboratory, CNRS UPR No. 292, Strasbourg
 
 
Disponibil în IBN: 19 septembrie 2023


Rezumat

Bulk and free-standing porous membranes of GaP have been characterised by Raman spectroscopy under hydrostatic pressure, with emphasis to the Fröhlich surface vibration mode. Under compression, an increase in the frequency gap between the Fröhlich mode and the LO phonon has been observed, which is attributed to pressure-induced changes in the anharmonicity of the surface-related modes and, possibly, to the relative increase of the dielectric constant of the surrounding effective medium, through better wetting under compression.

Cuvinte-cheie
Gallium phosphide, hydraulics, III-V semiconductors, wetting