<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<identifier identifierType='DOI'>10.1103/PhysRevB.66.165404</identifier>
<creators>
<creator>
<creatorName>Casian, A.I.</creatorName>
<affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Duşciac, V.G.</creatorName>
<affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Coropceanu, I.</creatorName>
<affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Huge carrier mobilities expected in quasi-one-dimensional organic crystals</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2002</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1098-0121</relatedIdentifier>
<subjects>
<subject>article</subject>
<subject>conductance</subject>
<subject>Crystal</subject>
<subject>Electric conductivity</subject>
<subject>electron</subject>
<subject>energy</subject>
<subject>Materials</subject>
<subject>Molecular dynamics</subject>
<subject>molecular interaction</subject>
<subject>Room temperature</subject>
</subjects>
<dates>
<date dateType='Issued'>2002-10-15</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>Extremely high carrier mobilities at room temperature are predicted in quasi-one-dimensional organic crystals at certain conditions that lead to the interference of two electron-phonon interaction mechanisms. The relaxation time as a function of carrier energy takes the form of a Lorentzian, which may be very sharp, if the crystal is rather pure and has pronounced quasi-one-dimensional properties. This signifies that in the conduction band a narrow strip of states arises for which the scattering rate is considerably reduced. As a result the mobility and also the electrical conductivity may exceed the ordinary values for such materials by more than three orders of magnitude.</p></description>
</descriptions>
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<format>uri</format>
</formats>
</resource>