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 SM ISO690:2012KHAN, Md I., EVANI, Vamsi K., COLLINS, Shamara P., PALEKIS, Vasilios, BANE, P., BAKHSHI, Sara, KENDRE, V., VATAVU, Sergiu, MOREL, Don L., FEREKIDES, Christos S.. Stoichiometric effects in polycrystalline CdTe. In: IEEE Photovoltaic Specialists Conference (PVSC), Ed. 40, 8 iunie 2014, Denver. Institute of Electrical and Electronics Engineers, 2014, Ediția 40, pp. 2343-2347. ISBN 9781479943975, 1479943975. DOI: https://doi.org/10.1109/PVSC.2014.6925397 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| IEEE Photovoltaic Specialists Conference (PVSC) Ediția 40, 2014 |
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Conferința "IEEE 40th Photovoltaic Specialist Conference (PVSC)" 40, Denver, Statele Unite ale Americii, 8 iunie 2014 | ||||||
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| DOI:https://doi.org/10.1109/PVSC.2014.6925397 | ||||||
| Pag. 2343-2347 | ||||||
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The effect of the vapor phase Cadmium (Cd) to Tellurium (Te) ratio on the electronic properties of CdTe films is being studied. The stoichiometry of CdTe films is being altered by varying the gas phase Cd/Te ratio during the Elemental Vapor Transport (EVT) deposition process. Resistivity-temperature measurements and solar cells made with polycrystalline EVT-CdTe suggest changes in the native cadmium vacancy (VCd) concentration and carrier lifetime. The findings are in good agreement with the recently updated defect levels using the HSE approximation. Photoluminescence (PL) analysis has also demonstrated variation in the formation of defect complexes with the Cd/Te ratio. 2-Photon TRPL lifetime measurements showed improved minority-carrier lifetime for CdCl2 treated samples deposited at low Cd/Te ratios. |
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| Cuvinte-cheie cadmium compound, defect, doping, lifetime |
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