Resistivity, ρ(T), and magnetoresistance (MR) are investigated in the Cu₂Zn_1−x Cd_x SnS₄ single crystals for compositions x ≡ Cd/(Zn + Cd) = 0.15-0.24, in the temperature range of T ∼ 50-300 K in pulsed magnetic fields of B up to 20 T. The Mott variable-range hopping (VRH) conductivity is established within wide temperature intervals lying inside ΔT _M ∼ 60-190 K for different x. The deviations from the VRH conduction, observable above and below ΔT _M, are connected to the nearest-neighbor hopping regime and to the activation on the mobility threshold of the acceptor band (AB) with width W ≈ 16-46 meV. The joint analysis of ρ(T) and positive MR permitted determination of other important electronic parameters. These include the localization radius, α ≈ 19-30 Å, the density of the localized states, g(μ) ≈ (1.6-21) × 10¹⁷ meV⁻¹ cm⁻³ at the Fermi level μ, and the acceptor concentration, N _A ∼ (6-8) × 10¹⁹ cm⁻³, for various x and in conditions of different vicinity of the investigated samples to the metal-insulator transition. In addition, details of the AB structure, including positions of μ and of the mobility threshold, E _c, are found depending on the alloy composition.