The current state-of-the-art of wide bandgap (WBG) semiconductor material technology is reviewed of highperformance and reliable power electronics switching devices. A concept called negative-watt, or “nega-watt” and the possible power cost reduction is mentioned. Gallium nitride (GaN) and silicon carbide (SiC) material and devices are evaluated when compared to conventional silicon power switching devices. Research in this domain is important for the future of automotive industry in the next years.