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 SM ISO690:2012DERMENJI, Lazari, CURMEI, Nicolai, GURIEVA, Galina, BRUC, Leonid. (AgxCu1 – x)2ZnSnS4-Based Thin Film Heterojunctions: Influence of CdS Deposition Method. In: Surface Engineering and Applied Electrochemistry, 2021, nr. 3(57), pp. 323-329. ISSN 1068-3755. DOI: https://doi.org/10.3103/S1068375521030054 |
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  Surface Engineering and Applied Electrochemistry |
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| Numărul 3(57) / 2021 / ISSN 1068-3755 /ISSNe 1934-8002 | ||||||
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| DOI:https://doi.org/10.3103/S1068375521030054 | ||||||
| Pag. 323-329 | ||||||
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Cu2ZnSnSe4 (CZTSe) based solar cells, containing abundant elements, with Ag alloying have recently reached efficiency of 10.2%. The open circuit voltage in CZTSe devices is believed to be limited, in between other factors, by strong band tailing caused by an exceptionally high density of Cu/Zn antisites. By replacing Cu in CZTSe with Ag, whose covalent radius is 15% larger than that of Cu and Zn, the density of I–II antisite defects (e.g., Cu–Zn disorder) is predicted to drop. In the present work, (AgxCu1 – x)2ZnSnS4 (ACZTS) heterostructures in three different architectures were investigated. The 5 and 10% silver substituted CZTS absorber layers were obtained by low-cost spray pyrolysis technique, as well as three different methods for the CdS layer deposition were tested in order to optimize the ACZTS heterostructure efficiency. |
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| Cuvinte-cheie (AgxCu1 – x)2ZnSnS4 thin films, CdS layer, chemical bath deposition, efficiency, Heterostructure, spray pyrolysis |
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