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SM ISO690:2012 MONAICO, Eduard, TIGINYANU, Ion, URSACHI, Veaceslav. Porous semiconductor compounds. In: Semiconductor Science and Technology, 2020, vol. 35, pp. 1-47. ISSN 0268-1242. DOI: https://doi.org/10.1088/1361-6641/ab9477 |
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Semiconductor Science and Technology | |||||||
Volumul 35 / 2020 / ISSN 0268-1242 | |||||||
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DOI:https://doi.org/10.1088/1361-6641/ab9477 | |||||||
CZU: 621.315.592+621.38+537.311.322+546 | |||||||
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In this review paper, we present a comparative analysis of the electrochemical dissolution of III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, and nanomembranes. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed. |
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Cuvinte-cheie Dissolution mechanisms, Electrochemical and photochemical etching, Nonlinear optical properties, Optical phonon engineering, Porous semiconductor compounds, Self-organized phenomena, Templated electrodeposition of metals |
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