<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Curmei, N.N.</dc:creator>
<dc:date>2016-06-24</dc:date>
<dc:description xml:lang='en'>A vapor phase pyrolysis deposition (VPPD) method has been described in [1] and applied to prepare indium tin oxide (ITO) thin films with thicknesses about 400 nm, with a conductivity of 8.3 • 103 –1 cm–1, and a transparency of 80% in the visible spectral range. The layers have been deposited on the (100) surface of the n-type Si wafers with a concentration of 1015 cm–3, and their morphology has been examined. The as-deposited ITO thin films consist of crystallites with a height of 300–400 nm and a width of 100–200 nm. Properties of low-cost Cu/ITO/SiO2/n-Si/n Si/Cu solar cells fabricated by depositing ITO layers on n-Si wafers have been studied. The maximum efficiency has been found to be 13.8%. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 15 (1-2) 76-82</dc:source>
<dc:title>Efficient low-cost solar cells based on ITO-nSi </dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>