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<creators>
<creator>
<creatorName>Curmei, N.N.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Efficient low-cost solar cells based on ITO-nSi </title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2016</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<subjects>
<subject schemeURI='http://udcdata.info/' subjectScheme='UDC'>621.472-022.53</subject>
</subjects>
<dates>
<date dateType='Issued'>2016-06-24</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>A vapor phase pyrolysis deposition (VPPD) method has been described in [1] and applied to prepare indium tin oxide (ITO) thin films with thicknesses about 400 nm, with a conductivity of 8.3 • 103 –1 cm–1, and a transparency of 80% in the visible spectral range. The layers have been deposited on the (100) surface of the n-type Si wafers with a concentration of 1015 cm–3, and their morphology has been examined. The as-deposited ITO thin films consist of crystallites with a height of 300–400 nm and a width of 100–200 nm. Properties of low-cost Cu/ITO/SiO2/n-Si/n Si/Cu solar cells fabricated by depositing ITO layers on n-Si wafers have been studied. The maximum efficiency has been found to be 13.8%. </description>
</descriptions>
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<format>application/pdf</format>
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