Proprietăţile electrice şi fotoelectrice ale monoseleniurii de galiu dopat cu Cd
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DMITROGLO, Liliana, VATAVU-CUCULESCU, Elmira, EVTODIEV, Igor, CARAMAN, Mihail. Proprietăţile electrice şi fotoelectrice ale monoseleniurii de galiu dopat cu Cd. In: Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice), 2011, nr. 7(47), pp. 117-121. ISSN 1857-2073.
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Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice)
Numărul 7(47) / 2011 / ISSN 1857-2073 /ISSNe 2345-1033

Proprietăţile electrice şi fotoelectrice ale monoseleniurii de galiu dopat cu Cd

Pag. 117-121

Dmitroglo Liliana, Vatavu-Cuculescu Elmira, Evtodiev Igor, Caraman Mihail
 
Universitatea de Stat din Moldova
 
 
Disponibil în IBN: 5 octombrie 2015


Rezumat

The paper is focused on analysis of structural transformations and investigations on electrical and photoelectrical properties of GaSe and GaSe:Cd semiconductors. The XRD analysis demonstrated that Cd atoms are homogeneously distributed in GaSe. It has been also shown that Cd atoms form localized levels which increase the absorption for hν

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<dc:creator>Dmitroglo, L.I.</dc:creator>
<dc:creator>Vatavu-Cuculescu, E.I.</dc:creator>
<dc:creator>Evtodiev, I.A.</dc:creator>
<dc:creator>Caraman, M.I.</dc:creator>
<dc:date>2011-12-12</dc:date>
<dc:description xml:lang='en'>The paper is focused on analysis of structural transformations and investigations on electrical and photoelectrical properties of GaSe and GaSe:Cd semiconductors. The XRD analysis demonstrated that Cd atoms are homogeneously distributed in GaSe. It has been also shown that Cd atoms form localized levels which increase the absorption for hν<Eg as well as increase holes' concentration up to 1.42·1017 cm-3.</dc:description>
<dc:source>Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice) 47 (7) 117-121</dc:source>
<dc:title>Proprietăţile electrice şi fotoelectrice ale monoseleniurii de galiu dopat cu Cd</dc:title>
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