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 SM ISO690:2012DMITROGLO, Liliana. Tranziţii excitonice indirecte în cristalele de GaSe:Cd. In: Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice), 2011, nr. 7(47), pp. 112-116. ISSN 1857-2073. |
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| Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice) | ||||||
| Numărul 7(47) / 2011 / ISSN 1857-2073 /ISSNe 2345-1033 | ||||||
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| Pag. 112-116 | ||||||
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The investigation of indirect excitonic transitions in GaSe:Cd crystals, grown by Bridgman method is brought in this paper. The gallium selenide doping with cadmium atoms was carried out during the synthesis process. At GaSe doping with 0,5% at of Cd the majority charge carriers are holes with the concentration of 6,0•1015 cm-3. The GaSe undoped crystals indirect band ga pat the temperatures of 298 K and 77K equals to 1,920 eV and 2,008 eV accordingly. Cd forms in ε-GaSe compound band gap at acceptor leve lat 0,116 eV under he valence band top. |
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