Single crystalline 2D porous arrays obtained by self organization in n-InP
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LANGA, Sergiu, CHRISTOPHERSEN, Marc, CARSTENSEN, Juergen, TIGINYANU, Ion, FOLL, Helmut. Single crystalline 2D porous arrays obtained by self organization in n-InP. In: Physica Status Solidi (A) Applied Research, 2003, vol. 197, pp. 77-82. ISSN 0031-8965. DOI: https://doi.org/10.1002/pssa.200306471
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Physica Status Solidi (A) Applied Research
Volumul 197 / 2003 / ISSN 0031-8965 /ISSNe 1521-396X

Single crystalline 2D porous arrays obtained by self organization in n-InP

DOI:https://doi.org/10.1002/pssa.200306471

Pag. 77-82

Langa Sergiu12, Christophersen Marc1, Carstensen Juergen1, Tiginyanu Ion2, Foll Helmut1
 
1 University of Kiel,
2 Technical University of Moldova
 
 
Disponibil în IBN: 20 noiembrie 2023


Rezumat

Self organization is a rather common phenomenon during pore formation in III-V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage oscillations in n-InP at high constant current densities are examples of a self organization process. In this paper we will discuss two-dimensional arrays of pores in n-InP with the unique property that they may form a single crystal as a result of a self organization process. The reasons for this long range order and its dependence on the etching conditions will be discussed.

Cuvinte-cheie
current density, electrochemistry, Electrodes, etching, porous materials, Semiconducting gallium arsenide, Semiconducting indium phosphide, single crystals

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