| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 85 0 |
 SM ISO690:2012FOLL, Helmut, CARSTENSEN, Juergen, LANGA, Sergiu, CHRISTOPHERSEN, Marc, TIGINYANU, Ion. Porous III-V compound semiconductors: Formation, properties, and comparison to silicon. In: Physica Status Solidi (A) Applied Research, 2003, vol. 197, pp. 61-70. ISSN 0031-8965. DOI: https://doi.org/10.1002/pssa.200306469 |
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 Physica Status Solidi (A) Applied Research |
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| Volumul 197 / 2003 / ISSN 0031-8965 /ISSNe 1521-396X | ||||||
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| DOI:https://doi.org/10.1002/pssa.200306469 | ||||||
| Pag. 61-70 | ||||||
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Pore formation in n-type III-V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the "pore zoology" in III-Vs was rather limited until recently. This paper will briefly review the specific pore morphologies in some compound semiconductors, nucleation and formation mechanisms, the relation to comparable Si pores (including some new observation in Si), and the particularly striking features that pores in III-semiconductors exhibit many features of self organization and on occasion peculiar luminescence properties. |
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| Cuvinte-cheie diffusion, Dislocations (crystals), dissolution, Electric space charge, Luminescence, Mesoporous materials, Microporous materials, morphology, Nucleation, porous silicon |
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