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<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<identifier identifierType='DOI'>10.1002/pssa.200306471</identifier>
<creators>
<creator>
<creatorName>Langa, S.</creatorName>
<affiliation>University of Kiel, Germania</affiliation>
</creator>
<creator>
<creatorName>Christophersen, M.</creatorName>
<affiliation>University of Kiel, Germania</affiliation>
</creator>
<creator>
<creatorName>Carstensen, J.</creatorName>
<affiliation>University of Kiel, Germania</affiliation>
</creator>
<creator>
<creatorName>Tighineanu, I.M.</creatorName>
<affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Foll, H.</creatorName>
<affiliation>University of Kiel, Germania</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Single crystalline 2D porous arrays obtained by self organization in n-InP</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2003</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>0031-8965</relatedIdentifier>
<subjects>
<subject>current density</subject>
<subject>electrochemistry</subject>
<subject>Electrodes</subject>
<subject>etching</subject>
<subject>porous materials</subject>
<subject>Semiconducting gallium arsenide</subject>
<subject>Semiconducting indium phosphide</subject>
<subject>single crystals</subject>
</subjects>
<dates>
<date dateType='Issued'>2003-05-01</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>Self organization is a rather common phenomenon during pore formation in III-V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage oscillations in n-InP at high constant current densities are examples of a self organization process. In this paper we will discuss two-dimensional arrays of pores in n-InP with the unique property that they may form a single crystal as a result of a self organization process. The reasons for this long range order and its dependence on the etching conditions will be discussed.</p></description>
</descriptions>
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<format>application/pdf</format>
</formats>
</resource>