| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 |
 110 0 |
 SM ISO690:2012BOTNARYUK, V., KOVAL, Andrei, SIMASHKEVICH, Aleksey, SHERBAN, Dormidont, RUD, V., RUD, Yu.. Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides. In: Semiconductors, 1997, vol. 31, pp. 677-680. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187064 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Semiconductors |
||||||
| Volumul 31 / 1997 / ISSN 1063-7826 | ||||||
|
||||||
| DOI:https://doi.org/10.1134/1.1187064 | ||||||
| Pag. 677-680 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The photoelectric properties of ITO/n-Si solar cells with ITO-side oblique incidence of linearly polarized light on the solar cells have been studied. Polarization photosensitivity and an increase in the relative quantum efficiency of photoconversion as a result of a decrease in reflection losses were found. The induced photopleochroism coefficient PI increases with the angle of incidence θ as PI∼θ2. The polarization photosensitivity of solar cells was studied as a function of the photon energy between the band gaps of the two contiguous materials. The results show that the solar cells studied can be used as selective polarimetric photosensors. |
||||||
| Cuvinte-cheie photosensitivity, Polarized Radiation, photodetectors |
||||||
|
|
|
|
