Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides

Botnaryuk V.; Koval Andrei; Simashkevich Aleksey; Sherban Dormidont; Rud V.; Rud Yu.

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BOTNARYUK, V., KOVAL, Andrei, SIMASHKEVICH, Aleksey, SHERBAN, Dormidont, RUD, V., RUD, Yu.. Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides. In: Semiconductors, 1997, vol. 31, pp. 677-680. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187064

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Semiconductors

Volumul 31 / 1997 / ISSN 1063-7826

Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides

DOI:https://doi.org/10.1134/1.1187064

Pag. 677-680

Botnaryuk V.¹, Koval Andrei¹, Simashkevich Aleksey¹, Sherban Dormidont¹, Rud V.², Rud Yu.³

¹ Moldova State University,
² State Educational Institution St. Petersburg State Polytechnical University,
³ Ioffe Physical-Technical Institute, RAS

Disponibil în IBN: 15 octombrie 2023

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Rezumat

The photoelectric properties of ITO/n-Si solar cells with ITO-side oblique incidence of linearly polarized light on the solar cells have been studied. Polarization photosensitivity and an increase in the relative quantum efficiency of photoconversion as a result of a decrease in reflection losses were found. The induced photopleochroism coefficient P_I increases with the angle of incidence θ as P_I∼θ². The polarization photosensitivity of solar cells was studied as a function of the photon energy between the band gaps of the two contiguous materials. The results show that the solar cells studied can be used as selective polarimetric photosensors.

Cuvinte-cheie
photosensitivity, Polarized Radiation, photodetectors

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<dc:creator>Botnaryuk, V.M.</dc:creator>
<dc:creator>Coval, A.V.</dc:creator>
<dc:creator>Simaşchevici, A.V.</dc:creator>
<dc:creator>Şerban, D.A.</dc:creator>
<dc:creator>Rud, V.Y.</dc:creator>
<dc:creator>Rud, Y.V.</dc:creator>
<dc:date>1997-07-01</dc:date>
<dc:description xml:lang='en'><p>&nbsp;</p><p>The photoelectric properties of ITO/n-Si solar cells with ITO-side oblique incidence of linearly polarized light on the solar cells have been studied. Polarization photosensitivity and an increase in the relative quantum efficiency of photoconversion as a result of a decrease in reflection losses were found. The induced photopleochroism coefficient P<sub>I</sub>&nbsp;increases with the angle of incidence &theta; as P<sub>I</sub>&sim;&theta;<sup>2</sup>. The polarization photosensitivity of solar cells was studied as a function of the photon energy between the band gaps of the two contiguous materials. The results show that the solar cells studied can be used as selective polarimetric photosensors.&nbsp;</p></dc:description>
<dc:identifier>10.1134/1.1187064</dc:identifier>
<dc:source>Semiconductors  () 677-680</dc:source>
<dc:subject>photosensitivity</dc:subject>
<dc:subject>Polarized Radiation</dc:subject>
<dc:subject>photodetectors</dc:subject>
<dc:title>Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides</dc:title>
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