For the first time, by the methods of tracer atoms, autoradiography, isothermal relaxation of capacity and current, and measurement of conductivity and Hall effect, an effective gettering of gold in silicon was found at combined or sequential diffusion of the rare-earth elements samarium or gadolinium in silicon, in its near–surface layers, where there is a region of high concentration of the IIIA group element, samarium or gad- olinium, as well as in the bulk silicon.