InP photovoltaic cells for renewable energetics having obvious advantages comparable with other ionizing rediation resistant PV cells [1] are realised based on homojunctions or heterojunctions obtained by such methods as diffusion, ion implanting, liquid or gaseous phase epitaxy or various combination of the last. The results of studies of PV cells based on InP homojunction and heterojunction are brought in this paper. The technological process of n+-po-p+InP type homojuntions obtaining consists of: • The Zn doped poInP (p° - (1…5)⋅1016cm-3) layer deposition on p+InP (p~3⋅1018cm-3) substrates by gaseous phase epitaxy in In-PCl3-H2 system at the temperature of 650°C and po-p+InP isostructure obtaining; • Deposition of Te doped n+InP (n=(3..5)⋅1018 cm-3) epitaxial layer on the poInP layer surface at the temperature of 650°C by the same method in the same technologic cycle. At the fabrication of n+CdS-poInP-p+InP hetrostructures the n+InP epitaxial layer was substituted by n+CdS layer having the thickness of 2÷4μm, deposited by quaziclosed space method in a H2 flow. The n+CdS layer is used as a „window” layer for n+-po-p+InP homostructure. The frontal contact is deposited bu In thermal evaporation in vacuum, the bottom contact was deposited by thermal evaporation of Ag+5%Zn alloy followed by heat treatment in H2 flow at 250°C and 420°C respectively. I-U and load dependencies on temperature were studied. It was established: • the open circuit voltage Uoc linearily decreases with temperature increase with the temperature coefficient of ( -0,25…-0,22)%⋅degree-1; • the short circuit current density jsc increase from 42,3 mA⋅cm-2 up to 50,3 mA⋅cm-2 wit the temperature coefficient of (0,008…0,07)%⋅degree -1; • the generated by PV cells maximum power varries with the temperature coefficient of (0,28…-0,25)%⋅degree -1 The comparison of the poad dependencies of n+CdS-n+InP-p-InP- p+InP homojunction and of n+CdS-p-InP-p+InP heterojunction at the illumination with a light flow of 100 mW⋅cm-2 one can observe: the efficiency of PV cells with the heterojunction reaches the value of 17,3% and is by 3,8% higher thanfor the PV cells with homojunction which is of 13,5%. This is due to the more efficient use of the visible spectrum, the fact proved by the form of photosensitivity spectral dependence.