According to [3] SiC nanolayers are characterized by two photosensitive spectral domains: shortwave (λ < 400 nm) and long-wave (up to λ ~ 700 nm) ones. It was found that the photosensitivity in the second (long-wave) domain was several tens of times lower than in the first domain. By now, experimental data for photosensitivity in near infrared region were absent. According to this, the aim of the present work was to study and analyze photosensitivity in red and infrared regions for the SiC nanolayers formed on Si substrates.In the work, photovoltaic response of the SiC/Si heterostructure was studied under red (λ ~ 632 nm), infrared (λ ~ 980 nm) and “white” light modulated by rectangular shape pulses. The thickness of epitaxial (111)SiC nanolayers grown on (111)Si substrates did not exceed 80-100 nm. The frequency modulation was varied in the range 5-1000 Hz. A typical photovoltaic response for infrared region is presented in fig. 2. The variation of the response was studied as a function of donor or acceptor impurity and resistivity Si semiconductor. The obtained results are discussed on the base of interface electric fields.