The composite stmctures containing fenomagnetic and piezoelectric layers are the basis for high­sensitivity magnetoelectric (ME) magnetic field sensors [1]. For applications it is ve1y important to know temperature characteristics of the devices. For this study we used bilayer composite FM-PE structures (LGT-Ni, PZT-Ni) with in-plane dimensions 20x5 mm2, PE layer thickness of 0.5 mm, Ni layer thickness of 10 µm, and str11ctures (PZT-Ni_T, LGT-Ni_T) with PE and Ni layer thickness of 0.5 mm and dimensions 18x3 mm2. Faces of the PE plate were covered with Ag electrodes and then layers were glued together with epoxy Loctite-199. An automated system was assembled for measurements. The samples were placed in a thenno-cell and their temperature was changed in the T = 100 .. .400 K range using a nitrogen flow. The thenno­cell in its tum was placed in ac magnetic field hcos(2Ttfl) (f= 0.1. .. 200 kHz, h = 0 ... 3 Oe) and de bias field H, parallel to each other. The ME voltage u generated across the PE layer was measured at a longitudinal acoustic resonance frequency for different T and optimum H conesponding to maximum of the piezomagnetic coefficient q = 8218H of the Ni layer. Temperature dependencies of ME coefficient aEf aEmax for investigated structures are shown in Fig. 1. The coefficient aE falls steadily for all the samples as T growing. The most significant fall of aE was found in LGT-based str11ctures: to 0.25aEmax for LGT-Ni_T and to 0.5aEmax for LGT-Ni. These str11ctures are characterized by high mechanical quality factor Q due to high Q of the LGT-layer. Fig. 2 demonstrates shift of resonant frequency !1/ = (1200 -Ji) of the str11ctures with layers of Ni versus temperature, where hoo designates resonant frequency at T=200 K. The lowest frequency deviation conesponds to LGT-based str11ctures with thin FM-layer: 40 Hz for LGT-Ni, what is 0,05%. For PZT-based samples and samples with thick Ni layers the frequency decreases with growth of T more significantly. It is shown that weak temperature dependence of resonant frequency in the LGT-based structures with thin Ni layer is due to compensation of the1mal coefficients of the LGT and NI layers. Results of this study can be used for develop the ME magnetic field sensors. The research was suppo1ied by the Ministry of Education and Science of Russia and the Russian Foundation for Basic Research.