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 SM ISO690:2012VILAPLANA, Rosario Isabel, ROBLEDILLO, M., GOMIS, Oscar, SANS, J., MANJON, Francisco Javier, PEREZ-GONZALEZ, Eduardo, RODRIGUEZ-HERNANDEZ, Placida Rogelio, MUNOZ, Alfonso Gonzalez, TIGINYANU, Ion, URSAKI, Veaceslav. Vibrational study of HgGa2S4 under high pressure. In: Journal of Applied Physics, 2013, vol. 113, p. 0. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.4794096 |
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  Journal of Applied Physics |
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| Volumul 113 / 2013 / ISSN 0021-8979 /ISSNe 1089-7550 | |
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| DOI:https://doi.org/10.1063/1.4794096 | |
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In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our measurements evidence that this semiconductor exhibits a pressure-induced phase transition from the completely ordered defect chalcopyrite structure to a partially disordered defect stannite structure above 18 GPa which is prior to the transition to the completely disordered rocksalt phase above 23 GPa. Furthermore, a completely disordered zincblende phase is observed below 5 GPa after decreasing pressure from 25 GPa. The disordered zincblende phase undergoes a reversible pressure-induced phase transition to the disordered rocksalt phase above 18 GPa. The sequence of phase transitions here reported for HgGa2S4 evidence the existence of an intermediate phase with partial cation-vacancy disorder between the ordered defect chalcopyrite and the disordered rocksalt phases and the irreversibility of the pressure-induced order-disorder processes occurring in ordered-vacancy compounds. The pressure dependence of the Raman modes of all phases, except the Raman-inactive disordered rocksalt phase, have been measured and discussed. |
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| Cuvinte-cheie Engineering controlled terms Copper compounds, Crystal lattices, Solids, Zinc sulfide Engineering uncontrolled terms Ab initio calculations, Defect chalcopyrite structure, Defect chalcopyrites, High pressure, Intermediate phase, Pressure dependence, Pressure-induced phase transition, Raman modes, Raman Scattering measurements, Rock salt, Rock-salt phase, Vibrational study, Zinc-blende Engineering main heading Defects |
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<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Vilaplana, R.</dc:creator> <dc:creator>Robledillo, M.</dc:creator> <dc:creator>Gomis, O.</dc:creator> <dc:creator>Sans, J.A.</dc:creator> <dc:creator>Manjon, F.</dc:creator> <dc:creator>Perez-Gonzalez, E.</dc:creator> <dc:creator>Rodriguez-Hernandez, P.</dc:creator> <dc:creator>Munoz, A.</dc:creator> <dc:creator>Tighineanu, I.M.</dc:creator> <dc:creator>Ursachi, V.V.</dc:creator> <dc:date>2013-03-07</dc:date> <dc:description xml:lang='en'><p>In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa<sub>2</sub>S<sub>4</sub>) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our measurements evidence that this semiconductor exhibits a pressure-induced phase transition from the completely ordered defect chalcopyrite structure to a partially disordered defect stannite structure above 18 GPa which is prior to the transition to the completely disordered rocksalt phase above 23 GPa. Furthermore, a completely disordered zincblende phase is observed below 5 GPa after decreasing pressure from 25 GPa. The disordered zincblende phase undergoes a reversible pressure-induced phase transition to the disordered rocksalt phase above 18 GPa. The sequence of phase transitions here reported for HgGa<sub>2</sub>S<sub>4</sub> evidence the existence of an intermediate phase with partial cation-vacancy disorder between the ordered defect chalcopyrite and the disordered rocksalt phases and the irreversibility of the pressure-induced order-disorder processes occurring in ordered-vacancy compounds. The pressure dependence of the Raman modes of all phases, except the Raman-inactive disordered rocksalt phase, have been measured and discussed.</p></dc:description> <dc:identifier>10.1063/1.4794096</dc:identifier> <dc:source>Journal of Applied Physics () 0-0</dc:source> <dc:subject>Engineering controlled terms Copper compounds</dc:subject> <dc:subject>Crystal lattices</dc:subject> <dc:subject>Solids</dc:subject> <dc:subject>Zinc sulfide Engineering uncontrolled terms Ab initio calculations</dc:subject> <dc:subject>Defect chalcopyrite structure</dc:subject> <dc:subject>Defect chalcopyrites</dc:subject> <dc:subject>High pressure</dc:subject> <dc:subject>Intermediate phase</dc:subject> <dc:subject>Pressure dependence</dc:subject> <dc:subject>Pressure-induced phase transition</dc:subject> <dc:subject>Raman modes</dc:subject> <dc:subject>Raman Scattering measurements</dc:subject> <dc:subject>Rock salt</dc:subject> <dc:subject>Rock-salt phase</dc:subject> <dc:subject>Vibrational study</dc:subject> <dc:subject>Zinc-blende Engineering main heading Defects</dc:subject> <dc:title>Vibrational study of HgGa2S4 under high pressure</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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