Resonant Tunneling and Quantum Cascading for Optimum Room-Temperature Generation of THz Signals
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SIRKELI, Vadim, YILMAZOGLU, Oktay, ONG, Duusheng, PREU, Sascha, KUPPERS, Franko, HARTNAGEL, Hans Ludwig. Resonant Tunneling and Quantum Cascading for Optimum Room-Temperature Generation of THz Signals. In: Indian Journal of Physics, 2017, nr. 8(91), pp. 3482-3488. ISSN 0973-1458. DOI: https://doi.org/10.1109/TED.2017.2718541
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Indian Journal of Physics
Numărul 8(91) / 2017 / ISSN 0973-1458

Resonant Tunneling and Quantum Cascading for Optimum Room-Temperature Generation of THz Signals

DOI:https://doi.org/10.1109/TED.2017.2718541

Pag. 3482-3488

Sirkeli Vadim12, Yilmazoglu Oktay2, Ong Duusheng3, Preu Sascha2, Kuppers Franko2, Hartnagel Hans Ludwig2
 
1 Comrat State University,
2 Technical University Darmstadt,
3 Multimedia University
 
 
Disponibil în IBN: 15 februarie 2018


Rezumat

We report on the results of a numerical study of quantum transport in ZnSe-based resonant-tunneling diodes (RTDs) and quantum cascade oscillators (QCOs) with fixed and unequal barrier heights. It is found that the negative differential resistance exists up to room temperature in the current-voltage characteristics of the RTD and QCO devices with unequal barrier heights. Further, we demonstrate that QCOs with unequal barrier heights have a better frequency and power performance characteristics compared with RTDs and are more beneficial for high-power terahertz generation at room temperature. For the best QCO device with 100 periods of quantum cascading, a maximum output power of 7-9 μW for the operating frequency range from 0.1 to 6 THz at room temperature was achieved.

Cuvinte-cheie
Alloy, BeSe, quantum well devices, semiconductor devices, ZnBeSe, ZnMgSe,

MgSe, resonant tunneling devices, terahertz (THz) radiation,

ZnSe