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 SM ISO690:2012ARSENTYEV, Ivan, BELYAEV, Alexander, BOBYL, A., BOLTOVETS, N., IVANOV, V., KONAKOVA, Raisa, KONNIKOV, Samuil, KUDRYK, Ya., MILENIN, Viktor, TARASOV, Ilya, MARKOVSKII, Ye., RUSU, Emil. New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes. In: International Crimean Conference "Microwave and Telecommunication Technology", Ed. 15, 12-16 septembrie 2005, Sevastopol. Sevastopol: Weber Publishing Co., 2005, Ediția 15, Vol.2, pp. 633-634. ISBN 978-966796879-3. DOI: https://doi.org/10.1109/CRMICO.2005.1565069 |
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| International Crimean Conference "Microwave and Telecommunication Technology" Ediția 15, Vol.2, 2005 |
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Conferința "International Crimean Conference ”Microwave and Telecommunication Technology”" 15, Sevastopol, Ucraina, 12-16 septembrie 2005 | |
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| DOI:https://doi.org/10.1109/CRMICO.2005.1565069 | |
| Pag. 633-634 | |
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We consider a novel technological approach to formation of structurally-perfect indium-phosphide and galliumarsenide epitaxial n-layers grown on specially prepared porous n+-InP and n+-GaAs substrates. The structural properties of epitaxial layers and output parameters of the Gunn diodes made on their basis were studied. The InP and GaAs epitaxial layers were grown in the same conditions on the standard substrates. The advantages of the epitaxial layers grown on porous substrates and Gunn diodes made on their basis are demonstrated. |
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| Cuvinte-cheie Engineering controlled terms Epitaxial growth, Gunn diodes, porous materials, Semiconducting indium phosphide Engineering uncontrolled terms Epitaxial layers, Porous substrates Engineering main heading Semiconducting gallium arsenide |
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