Mechanisms of hopping conductivity in weakly doped La1-xBa xMnO3

Laiho Reino; Lisunov Konstantin; Lähderanta Erkki; Shakhov Mikhail; Stamov Vladimir; Zakhvalinskii Vasilii; Kozhevnikov Vladimir; Leonidov Ilia; Mitberg Eduard; Patrakeev Mikhail

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LAIHO, Reino, LISUNOV, Konstantin, LÄHDERANTA, Erkki, SHAKHOV, Mikhail, STAMOV, Vladimir, ZAKHVALINSKII, Vasilii, KOZHEVNIKOV, Vladimir, LEONIDOV, Ilia, MITBERG, Eduard, PATRAKEEV, Mikhail. Mechanisms of hopping conductivity in weakly doped La1-xBa xMnO3. In: Journal of Physics Condensed Matter, 2005, vol. 17, pp. 3429-3444. ISSN 0953-8984. DOI: https://doi.org/10.1088/0953-8984/17/21/033

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Journal of Physics Condensed Matter

Volumul 17 / 2005 / ISSN 0953-8984 /ISSNe 1361-648X

Mechanisms of hopping conductivity in weakly doped La1-xBa xMnO3

DOI:https://doi.org/10.1088/0953-8984/17/21/033

Pag. 3429-3444

Laiho Reino¹, Lisunov Konstantin¹², Lähderanta Erkki¹³, Shakhov Mikhail¹⁴, Stamov Vladimir¹², Zakhvalinskii Vasilii¹⁵, Kozhevnikov Vladimir⁶, Leonidov Ilia⁶, Mitberg Eduard⁶, Patrakeev Mikhail⁶

¹ Wihuri Physical Laboratory, University of Turku,
² Institute of Applied Physics, Academy of Sciences of Moldova,
³ Lappeenranta University of Technology,
⁴ Ioffe Physical-Technical Institute, RAS,
⁵ Belgorod State University,
⁶ Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg

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Menționat în lucrare: INTAS-2000-00728 Hydrogen in mixed-valence perovskites: new approach to the chemical control of physical properties of HTSC and manganites

Disponibil în IBN: 5 martie 2024

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The resistivity, ρ, of ceramic La_1-xBa_xMnO ₃ with x = 0.02-0.10 corresponding to the concentrations of holes c≈0.15-0.17 displays an activated behaviour both above and below the paramagnetic to ferromagnetic transition temperature T _C = 175-209 K, obtained from measurements of the magnetization. Above T∼310-390 K ρ(T,x) is determined by nearest-neighbour hopping of small polarons with activation energy E _a = 0.20-0.22 eV. Below the onset temperature T_v = 250-280 K, depending on x, a Shklovskii-Efros-like variable-range hopping conductivity mechanism, governed by a soft temperature independent Coulomb gap, Δ≈0.44-0.46 eV, and a rigid gap, δ(T), is found. For the range T∼50-120 K, δ(T) is connected to the formation of small lattice polarons in conditions of strong electron-phonon interaction and lattice disorder. The rigid gap obeys a law δ(T)∼T^1/2 within two temperature intervals above and below T_C, exhibits an inflection at T_C and reaches at T _v a value of δ_v≈0.14-0.18 eV. Such behaviour suggests a spin dependent contribution to δ(T). The localization radius of the charge carriers, a, has different constant values within the temperature intervals where δ(T)∼T^1/2. With further decrease of T, a increases according to the law expected for small lattice polarons.

Cuvinte-cheie
Engineering controlled terms Activation energy, Ceramic materials, Colossal magnetoresistance, ferromagnetism, Lanthanum compounds, magnetization, Manganese compounds, Paramagnetism, perovskite, Polarons Engineering uncontrolled terms Electron-phonon interactions, Hopping conductivity, Lattice disorder, Lattice polarons Engineering main heading Electric conductivity

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Activation energy; Ceramic materials; Colossal magnetoresistance; ferromagnetism; Lanthanum compounds; magnetization; Manganese compounds; Paramagnetism; perovskite; Polarons
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