In n‐ZnSe crystals which have been preliminarily annealed in liquid Zn and then exposed to radiation by a flow of electrons with an energy of E = 1.3 MeV and a dose of irradiation from 2.73 × 10¹⁶ to 5.19 × 10¹⁷ electrons/cm² phenomena of a long‐persistent conductivity relaxation (LP) and frozen conduction (FC) at 77 K are brought out and examined. It is shown that the character of the relaxation processes at small doses of irradiation is satisfactorily explained by the two‐barrier model of an inhomogeneous semiconductor which represents a low‐resistance matrix with high‐resistance inclusions (clusters). As the dose of irradiation grows the overlapping of space charge regions which surround the high‐resistance inclusions increases and the considered model of high‐resistance inclusions passes at D = 3 × 10¹⁷ electrons/cm² into a model of a random potential relief. The temperature quenching of FC is explained assuming that with temperature growth the drift and recombination barriers decrease simultaneously as a result of the variation of the size of the space charge regions which surround the clusters.