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 SM ISO690:2012VASILIEV, Ion, YOVU, M., KOLOMEYKO, Eduard. Photocapacitance relaxation and rigidity transition in Ge xAsxSe1-2x amorphous films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 33, 11-13 octombrie 2010, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2010, Vol. 2, pp. 349-352. ISBN 978-142445781-6. DOI: https://doi.org/10.1109/SMICND.2010.5650648 |
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| Proceedings of the International Semiconductor Conference Vol. 2, 2010 |
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Conferința " International Semiconductor Conference" 33, Sinaia, Romania, 11-13 octombrie 2010 | |||||||
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| DOI:https://doi.org/10.1109/SMICND.2010.5650648 | |||||||
| Pag. 349-352 | |||||||
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The photocapacitance relaxation of GexAsxSe 1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25 and 0.30. Compositional dependencies of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and another - near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000). |
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| Cuvinte-cheie Bulk samples, Calorimetric methods, Decay time constant, dielectric permeability, low frequency, Photocapacitance, Rigidity transition |
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DataCite XML Export
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